Title :
Fermi level unpinning of GaSb(100) using Plasma Enhanced ALD Al2O3 dielectric
Author :
Ali, A. ; Madan, H.S. ; Kirk, A.P. ; Wallace, R.M. ; Zhao, D.A. ; Mourey, D.A. ; Hudait, M. ; Jackson, T.N. ; Bennett, B.R. ; Boos, J.B. ; Datta, S.
Author_Institution :
Penn State Univ., University Park, PA, USA
Abstract :
This paper discusses arsenic-antimonide based MOS-HEMTs which have great potential to enable complementary logic operation at low supply voltage. The effects of various surface passivation approaches on the capacitance-voltage characteristics (C-V) and the surface chemistry of n-type and p-type GaSb(100) MOS capacitors made with ALD and Plasma Enhanced ALD (PEALD) Al2O3 dielectrics studied in this paper. This paper also proposed for the first time unpinned Fermi level in GaSb MOS system with high-κ PEALD Al2O3 dielectric using admittance spectroscopy and XPS analysis.
Keywords :
Fermi level; III-V semiconductors; MIS devices; MOS capacitors; aluminium compounds; atomic layer deposition; gallium compounds; high electron mobility transistors; high-k dielectric thin films; passivation; plasma deposition; Al2O3; C-V characteristics; GaSb; MOS-HEMT; XPS analysis; admittance spectroscopy; capacitance-voltage characteristics; complementary logic operation; n-type MOS capacitors; p-type MOS capacitors; plasma enhanced ALD; surface chemistry; surface passivation; Epitaxial growth; Gold; Indium gallium arsenide; Lead; Nickel;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551954
