Title :
Advances in bipolar junction transistor modeling
Author :
Chen, Tianbing ; Ma, James
Author_Institution :
ProPlus Design Solutions Inc., San Jose, CA, USA
Abstract :
This paper gives a brief overview on recent advances in bipolar junction transistor (BJT) modeling and related simulation applications in circuit design. This work starts with a review of existing BJT compact model formulations, and covers a broad range of advanced topics such as precision temperature modeling, sub-circuit design, mismatch and corner modeling, and BJT scalable model.
Keywords :
bipolar transistors; BJT compact model formulations; BJT scalable model; bipolar junction transistor modeling; corner modeling; mismatch modeling; precision temperature modeling; subcircuit design; Computational modeling; Integrated circuit modeling; Junctions; Mathematical model; Semiconductor device modeling; Semiconductor process modeling; Transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667345
