Title :
Fabrication and RF performance of InAs nanowire FET
Author :
Prost, W. ; Tegude, F.J.
Author_Institution :
Solid State Electron. Dept., Univ. of Duisburg-Essen, Duisburg, Germany
Abstract :
We report on fabrication of single and multiple InAs nanowire metal-insulator field-effect transistor (NWMISFET). An omega shaped top gate is employed for easier fabrication and heterogeneous integration while still maintaining an almost full surrounding of the wire. An outstanding DC performance of InAs NW-FETs with a SiNχ gate dielectric has already been reported.
Keywords :
MISFET; indium alloys; nanowires; InAs; NWMISFET; metal-insulator field-effect transistor; nanowire FET; omega shaped top gate; Annealing; Argon; Radio frequency;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551958
