Performance and reliability of high-power lasers between 900-990 nm

Author

Li, Benjamin ; Parke, Ross A. ; Jackson, Gordon S. ; Craig, Richard R.

Author_Institution

SDL Inc., San Jose, CA, USA

fYear

1997

Firstpage

352

Lastpage

353

Abstract

In conclusion, 100-μm broad area InGaAs quantum well lasers for fibre laser pumping with peak cw power exceeding 8 W and high power operating up to 90°C have been demonstrated. Preliminary lifetest data suggest that reliable 100-μm broad area lasers are possible for power between 1~2 watts. These lasers will fulfill the lifetime demand of telecommunication applications because of generous power and temperature margins

Keywords

gallium arsenide; indium compounds; infrared sources; laser reliability; laser transitions; life testing; optical communication equipment; optical pumping; quantum well lasers; semiconductor device reliability; semiconductor device testing; telecommunication network reliability; 1 to 2 W; 100 mum; 90 C; 900 to 990 nm; InGaAs; broad area InGaAs quantum well lasers; fibre laser pumping; generous power margins; high power; high-power laser reliability; lifetest data; lifetime demand; peak cw power; reliable 100-μm broad area lasers; telecommunication applications; temperature margins; Fiber lasers; Performance evaluation; Power lasers; Pump lasers; Quantum well lasers; Semiconductor lasers; Solid lasers; Stimulated emission; Temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication. OFC 97., Conference on

Conference_Location

Dallas, TX

Print_ISBN

1-55752-480-7

Type

conf

DOI

10.1109/OFC.1997.719957

Filename

719957