A fast testing of electromigration immunity using noise measurement technique

Author

Komori, Junko ; Takata, Yoshifumi ; Mitsuhashi, Jun-ichi ; Tsubouchi, Natsurou

Author_Institution

Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1990

Firstpage

257

Lastpage

261

Abstract

A quick wafer-level evaluation technique for electromigration immunity is proposed. Noise measurements (1/f, 1/f²) are performed on a test pattern with stress gradients under high current density up to 2×10⁷ A/cm ². Each of the measurements is completed within a few minutes. The temperature of the interconnections (200°C for a current density of 2×10⁷ A/cm²) is low enough to evaluate electromigration. The effectiveness of the proposed technique has been verified by observing that the current noise spectrum is closely related to the void formation

Keywords

electric noise measurement; electromigration; integrated circuit testing; metallisation; 1/f noise; 200 degC; current noise spectrum; electromigration immunity; fast testing; high current density; high-speed testing; interconnection temperature; noise measurement technique; stress gradients; test pattern; void formation; wafer-level evaluation technique; Current density; Current measurement; Electromigration; Integrated circuit interconnections; Noise measurement; Optical microscopy; Optical noise; Temperature; Testing; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1991. ICMTS 1991. Proceedings of the 1991 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-87942-588-1

Type

conf

DOI

10.1109/ICMTS.1990.161753

Filename

161753