DocumentCode
1629443
Title
Novel high speed low voltage circuit structures for BiCMOS SRAMs
Author
Gu, R.X. ; Elmasry, M.I.
Author_Institution
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fYear
1993
Firstpage
167
Lastpage
170
Abstract
Novel high speed circuits; ECL/CMOS, CMOS/ECL interface circuits and a BiCMOS sense amplifier are reported. A generic 0.8 μm complementary BiCMOS technology has been used in the circuit design. Circuit simulation results show superior performance of the novel circuits over conventional designs
Keywords
SRAM chips; BiCMOS SRAMs; BiCMOS sense amplifier; CMOS/ECL interface circuits; ECL/CMOS interface circuits; circuit design; high speed; low voltage circuit structures; simulation; SRAM chips;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-1316-X
Type
conf
DOI
10.1109/BIPOL.1993.617490
Filename
617490
Link To Document