• DocumentCode
    1629588
  • Title

    Ultra-thin-body PECVD Ge TFT low-voltage flash memory cell with high-k dielectrics for three-dimensional integration

  • Author

    Lee, Jaegoo ; Cha, Judy J. ; Naoi, Taro ; Muller, David A. ; van Dover, R.B. ; Shaw, Jonathan T. ; Kan, Edwin C.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
  • fYear
    2010
  • Firstpage
    259
  • Lastpage
    260
  • Abstract
    In this study, we demonstrate the material and electrical characteristics of stackable Ge TFT flash memory cell with Al2O3 high-k tunnel dielectric, metal NCs and (Ti,Dy)xOy control dielectric. Our proposed planar thin-film process is a simple batch process, and can therefore be used with relatively small cost increase.
  • Keywords
    flash memories; thin film transistors; batch process; control dielectric; electrical characteristics; high-k tunnel dielectric; material characteristics; planar thin film process; stackable TFT flash memory cell; three-dimensional integration; ultra-thin-body PECVD TFT low-voltage flash memory cell; Annealing; Chromium; Flash memory cells; Gold; Logic gates; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2010
  • Conference_Location
    South Bend, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-6562-0
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2010.5551968
  • Filename
    5551968
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1629588