Title :
Ultra-thin-body PECVD Ge TFT low-voltage flash memory cell with high-k dielectrics for three-dimensional integration
Author :
Lee, Jaegoo ; Cha, Judy J. ; Naoi, Taro ; Muller, David A. ; van Dover, R.B. ; Shaw, Jonathan T. ; Kan, Edwin C.
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
In this study, we demonstrate the material and electrical characteristics of stackable Ge TFT flash memory cell with Al2O3 high-k tunnel dielectric, metal NCs and (Ti,Dy)xOy control dielectric. Our proposed planar thin-film process is a simple batch process, and can therefore be used with relatively small cost increase.
Keywords :
flash memories; thin film transistors; batch process; control dielectric; electrical characteristics; high-k tunnel dielectric; material characteristics; planar thin film process; stackable TFT flash memory cell; three-dimensional integration; ultra-thin-body PECVD TFT low-voltage flash memory cell; Annealing; Chromium; Flash memory cells; Gold; Logic gates; Thin film transistors;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551968
