• DocumentCode
    1629610
  • Title

    A charge-trapping memory structure featuring low-voltage high-speed operation and 250 °C retention

  • Author

    Peng, C.-Y. ; Zhang, W.Q. ; Sun, X. ; Liu, Z.G. ; Cui, Sharon ; Ma, T.P. ; Kornblum, Lior ; Eizenberg, Moshe

  • Author_Institution
    Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
  • fYear
    2010
  • Firstpage
    261
  • Lastpage
    262
  • Abstract
    We have demonstrated that MAD-Al2O3 is an excellent candidate for the tunnel, as well as for the blocking dielectrics in NAND-type memories. Despite the limited minority carrier generation rate, the MANAS capacitors have already demonstrated superb memory characteristics, especially the 250°C retention, which we believe is exceptional and unprecedented. The process simplicity is also an attractive feature, making the MANAS structure viable for future generations of non-volatile memories.
  • Keywords
    MIS capacitors; NAND circuits; alumina; elemental semiconductors; minority carriers; nitrogen compounds; random-access storage; silicon; Al2O3-N2-Al2O3-Si; MANAS capacitors; NAND-type memories; blocking dielectrics; charge-trapping memory structure; low-voltage high-speed operation; minority carrier generation rate; nonvolatile memories; temperature 250 degC; Dielectrics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2010
  • Conference_Location
    South Bend, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-6562-0
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2010.5551969
  • Filename
    5551969
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1629610