Title :
A charge-trapping memory structure featuring low-voltage high-speed operation and 250 °C retention
Author :
Peng, C.-Y. ; Zhang, W.Q. ; Sun, X. ; Liu, Z.G. ; Cui, Sharon ; Ma, T.P. ; Kornblum, Lior ; Eizenberg, Moshe
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
Abstract :
We have demonstrated that MAD-Al2O3 is an excellent candidate for the tunnel, as well as for the blocking dielectrics in NAND-type memories. Despite the limited minority carrier generation rate, the MANAS capacitors have already demonstrated superb memory characteristics, especially the 250°C retention, which we believe is exceptional and unprecedented. The process simplicity is also an attractive feature, making the MANAS structure viable for future generations of non-volatile memories.
Keywords :
MIS capacitors; NAND circuits; alumina; elemental semiconductors; minority carriers; nitrogen compounds; random-access storage; silicon; Al2O3-N2-Al2O3-Si; MANAS capacitors; NAND-type memories; blocking dielectrics; charge-trapping memory structure; low-voltage high-speed operation; minority carrier generation rate; nonvolatile memories; temperature 250 degC; Dielectrics;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551969
