DocumentCode :
1629775
Title :
Self-heating effects in analog Bulk and SOI CMOS circuits
Author :
Roy, Urmimala ; Sangiorgi, Enrico ; Fiegna, Claudio
Author_Institution :
ARCES-DEIS, Univ. of Bologna, Cesena, Italy
fYear :
2010
Firstpage :
1782
Lastpage :
1785
Abstract :
In this work, we study the impact of device self-heating on Bulk and double-gate silicon-on-insulator (DGSOI) technologies using self-consistent electrothermal (ET) simulations. Device characteristics of Bulk and DGSOI MOSFETs have been studied to estimate device performance and the impact of self-heating on the same. Self-heating effect (SHE) on the AC performance has also been studied for these two technologies.
Keywords :
CMOS analogue integrated circuits; MOSFET; circuit simulation; semiconductor device models; silicon-on-insulator; DGSOI MOSFET; ET simulation; SOI CMOS circuit; analog circuit; bulk MOSFET; double-gate silicon-on-insulator; self-consistent electrothermal simulation; self-heating effect; Admittance; Heating; Logic gates; MOSFETs; Performance evaluation; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
Type :
conf
DOI :
10.1109/ICSICT.2010.5667366
Filename :
5667366
Link To Document :
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