A 90nm CMOS PA module for 4G applications with embedded PVT gain compensation circuit

Author

Degani, Ofir ; Israel, Amichay ; Cossoy, Fabian ; Volokotin, Vova ; Levy, Kinneret ; Schwartz, Eli ; Papir, Erez ; Arbiv, Moshe ; Refaeli, Itsik ; Gidony, David ; Rivel, Shahar

Author_Institution

Mobility Wireless Group, Intel Israel (74) Ltd., Haifa, Israel

fYear

2012

Firstpage

25

Lastpage

28

Abstract

A 90nm CMOS dual band power amplifier flip-chip module for 4G (WiMAX/LTE) applications with embedded process and temperature gain compensation circuit, is presented. The gain compensation circuit reduces the gain variation over temperature from 3dB/stage to 0.25dB/stage. Mask compliance is achieved at power (efficiency) of 26.7/26.3dBm (24/23%) and 27.9/27.3dBm (29/26%) for 10MHz WiMAX and LTE packets, at 2.5/3.5GHz bands, respectively.

Keywords

4G mobile communication; CMOS integrated circuits; power amplifiers; 4G WiMAX/LTE applications; 4G applications; CMOS PA module; CMOS dual band power amplifier flip-chip module; embedded PVT gain compensation circuit; embedded process; mask compliance; size 90 nm; temperature gain compensation circuit; CMOS integrated circuits; Gain; Power amplifiers; Power generation; Temperature; Temperature measurement; WiMAX;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Amplifiers for Wireless and Radio Applications (PAWR), 2012 IEEE Topical Conference on

Conference_Location

Santa Clara, CA

Print_ISBN

978-1-4577-1119-0

Type

conf

DOI

10.1109/PAWR.2012.6174913

Filename

6174913