Radiation and hot electron effects on BiCMOS switching

Author

Phanse, A.M. ; Yuan, J.S. ; Yeh, C.S. ; Gadepally, B.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA

fYear

1994

Firstpage

143

Lastpage

148

Abstract

The effects of ionizing radiation and hot electrons on the BiCMOS switching response have been studied. The radiation induced surface recombination current in the base of the bipolar transistor and the radiation and hot electron induced resistive leakage paths in the BiCMOS structure have been modeled as a function of the interface state density and the oxide trapped charge density. An equivalent circuit model of a BiCMOS inverter, including radiation and hot electron effects on the MOSFET and the bipolar transistor and leakage paths in the BiCMOS structure is proposed. The proposed model is compared with experimental data and with MEDICI simulations and the agreement is good.

Keywords

BiCMOS integrated circuits; X-ray effects; circuit analysis computing; electron-hole recombination; equivalent circuits; gamma-ray effects; hot carriers; integrated circuit modelling; interface states; leakage currents; space vehicle electronics; surface recombination; BiCMOS switching; MEDICI simulations; equivalent circuit model; hot electron effects; interface state density; inverter; ionizing radiation effects; oxide trapped charge density; radiation induced surface recombination current; resistive leakage paths; BiCMOS integrated circuits; Bipolar transistors; Circuit simulation; Electron traps; Equivalent circuits; Interface states; Inverters; Ionizing radiation; MOSFET circuits; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Southcon/94. Conference Record

Conference_Location

Orlando, FL, USA

Print_ISBN

0-7803-9988-9

Type

conf

DOI

10.1109/SOUTHC.1994.498090

Filename

498090