Title :
Linearizing high power amplifiers (with emphasis on predistortion and GaN devices)
Author :
Katz, Allen ; Dorval, Roger
Author_Institution :
Coll. of New Jersey, Ewing, NJ, USA
Abstract :
The trades involved in the decision to include linearization in the design of a microwave high power amplifier will be discussed. Emphasis will be placed on the use of predistortion linearization, and particularly on its application with amplifiers employing recently available GaN FET power devices. Both digital and analog techniques will be considered.
Keywords :
III-V semiconductors; gallium compounds; linearisation techniques; microwave field effect transistors; microwave power amplifiers; wide band gap semiconductors; GaN; GaN FET power device; analog technique; digital technique; microwave high power amplifier; predistortion linearization; Bandwidth; Gallium nitride; Linearity; Microwave amplifiers; Microwave circuits; Microwave communication; GaAs; GaN; SSPA; TWTA; high power amplifier; linearizer; microwave; predistortion;
Conference_Titel :
Power Amplifiers for Wireless and Radio Applications (PAWR), 2012 IEEE Topical Conference on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4577-1119-0
DOI :
10.1109/PAWR.2012.6174915
