Evaluation of aluminum mole fraction for controlled thermal behavior of AlGaAs/GaAs HBT

Author

Panchapakesan, C. ; Yuan, J.S.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA

fYear

1994

Firstpage

152

Lastpage

157

Abstract

The thermal behavior of AlGaAs/GaAs HBT was analyzed. The thermal stability improves with increasing Al mole fraction. The turn-on voltage of the device increases as the mole fraction which results in less power dissipation and hence better thermal stability. Two dimensional analysis shows much reduced temperatures compared to 1D since it accommodates the lateral dissipation of heat. Multi-emitter finger heterojunction transistor exhibits non-uniform temperature distribution across the device. To reduce the peak temperatures, device layouts with narrower emitters and/or wider spacing between the emitters are used.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; semiconductor device reliability; thermal stability; AlGaAs-GaAs; HBT; controlled thermal behavior; device layouts; lateral dissipation; multi-emitter finger heterojunction transistor; nonuniform temperature distribution; peak temperatures; power dissipation; thermal stability; turn-on voltage; two dimensional analysis; Aluminum; Charge carrier processes; Conducting materials; Gallium arsenide; Heterojunction bipolar transistors; Lattices; Poisson equations; Semiconductor materials; Temperature dependence; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Southcon/94. Conference Record

Conference_Location

Orlando, FL, USA

Print_ISBN

0-7803-9988-9

Type

conf

DOI

10.1109/SOUTHC.1994.498092

Filename

498092