Title :
High power 808 nm diode lasers grown by MOCVD using MO group V sources in N/sub 2/ ambient
Author :
Tang Xiahong ; Bo baoxue ; Zhang Baolin ; Tjin Swee Chuan
Author_Institution :
Photonics Res. Center, Nanyang Technol. Univ., Singapore, Singapore
Abstract :
The paper presents the recent result of an AlGaAs/GaAs high power diode laser emitting at 808 nm grown by MOCVD using TBAs (tertiary-butyl arsines) as the group V source and N2 as carrier gas. This is the first report so far for high power AlGaAs/GaAs diode lasers prepared by MOCVD growth using TBA group V MO source in 100% nitrogen ambient. Broad area stripe lasers have been prepared with stripe width of 150 μm. Lasing has been successfully achieved from the wafer with a low threshold current density of 267 A/cm2 with the laser cavity length of 1000 μm. Laser diode devices with different cavity lengths, 1200 μm, 1000 μm and 800 μm, were cleaved to obtain the internal loss, αi, and internal quantum efficiency, ηi, of the devices. The αi received was about 9.7 cm-1 and ηi of 81% was deduced.
Keywords :
MOCVD; aluminium compounds; gallium arsenide; gallium compounds; infrared sources; nitrogen; quantum well lasers; semiconductor growth; 150 micron; 800 to 1200 micron; 808 nm; AlGaAs-GaAs; MOCVD; N2; broad area stripe lasers; carrier gas; group V; high power diode lasers; internal loss; internal quantum efficiency; single quantum well; tertiary-butyl arsine; threshold current density; Chemical lasers; Diode lasers; Gas lasers; MOCVD; Nitrogen; Optical materials; Power lasers; Semiconductor materials; Solid lasers; Temperature;
Conference_Titel :
Communications, Circuits and Systems, 2004. ICCCAS 2004. 2004 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
0-7803-8647-7
DOI :
10.1109/ICCCAS.2004.1346216
