Gamma-ray irradiation of ZnO thin film transistors and circuits

Author

Zhao, Dalong ; Mourey, Devin A. ; Jackson, Thomas N.

Author_Institution

Center for Thin Film Devices & Mater. Res. Inst., Penn State Univ., University Park, PA, USA

fYear

2010

Firstpage

241

Lastpage

242

Abstract

The radiation tolerance of electronic devices and circuits is of interest for space and some other harsh environment applications. Properly designed deep submicron gate length Si MOSFETs can have small threshold voltage shift and leakage increase for doses of 100 kGy (10 Mrad) or even larger, however polysilicon thin film transistors (TFTs) show significant changes at much lower dose (<; 1 kGy) and a-Si:H TFTs have volt-range threshold voltage shift for 10 kGy dose. We report here the effects of gamma-ray irradiation on plasma enhanced atomic layer deposition (PEALD) ZnO TFTs and circuits.

Keywords

MOSFET; atomic layer deposition; gamma-rays; plasma deposition; radiation effects; silicon; thin film transistors; zinc compounds; PEALD; Si; Si MOSFET; TFT; ZnO; ZnO thin film transistor; deep submicron gate length; electronic device; gamma-ray irradiation; plasma enhanced atomic layer deposition; polysilicon thin film transistor; radiation tolerance; threshold voltage shift; Annealing; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2010

Conference_Location

South Bend, IN

ISSN

1548-3770

Print_ISBN

978-1-4244-6562-0

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2010.5551979

Filename

5551979