Title :
High performance and low driving voltage amorphous InGaZnO thin-film transistors using high-к HfSiO dielectrics
Author :
Huang, Hau-Yuan ; Huang, Yen-Chieh ; Su, Je-Yi ; Su, Nai-Chao ; Chiang, Chen-Kuo ; Wu, Chien-Hung ; Wang, Shui-Jinn
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
Thin-film transistors were fabricated using amorphous indium gallium zinc oxide (α-IGZO) as channels and high-κ material HfSiO as gate dielectric by RF sputtering. The influence of high-κ PDA temperature variation on device characteristics was investigated. The bottom-gate low voltage driven (≤ 2 V) TFTs operated in n-type enhancement mode with a field-effect mobility of 12.7cm2/V-s, on-off current ratio of 3 × 105, threshold voltage of 0.005V, and subthreshold voltage swing of 0.11V/dec.
Keywords :
gallium compounds; hafnium compounds; high-k dielectric thin films; indium compounds; silicon compounds; sputtering; thin film transistors; zinc compounds; HfSiO; InGaZnO; RF sputtering; field-effect mobility; gate dielectric; high-κ PDA temperature variation; high-κ dielectrics; low driving voltage amorphous thin film transistors; n-type enhancement mode; voltage 0.005 V; Capacitance-voltage characteristics; Capacitors; Logic gates; Temperature distribution; X-ray scattering;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551980
