Title :
Transient effects of graded-channel partially depleted SOI nMOSFET
Author :
Tang, Minghua ; Xiao, Yongguang ; Zhang, Lianbao ; Xu, Xiaolei ; Zhang, Jun ; Tang, Junxiong
Author_Institution :
Key Lab. of Low Dimensional Mater. & Applic. Technol., Xiangtan Univ., Xiangtan, China
Abstract :
The transient effect of graded channel partially-depleted silicon-on-insulator nMOSFETs are analyzed by SILVACO ATLAS software. The switch on and switch off transient behaviors are studied for the device. While the device operates in the kink region, the transient effects of drain current were also investigated. It was found that the transient characteristic of the graded channel device was superior to the conventional device and changing the parameters of the graded channel device can cause various transient behaviors.
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; transient analysis; SILVACO ATLAS software; channel device; drain current; graded-channel partially depleted SOI nMOSFET; silicon-on-insulator; transient effects; Electric potential; Logic gates; MOSFET circuits; Steady-state; Switches; Threshold voltage; Transient analysis;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667372
