Work-function engineering in novel high Al composition Al0.72Ga0.28N/AlN/GaN HEMTs

Author

Li, Guowang ; Zimmermann, Tom ; Cao, Yu ; Lian, Chuanxin ; Xing, Xiu ; Wang, Ronghua ; Fay, Patrick ; Xing, Huili Grace ; Jena, Debdeep

Author_Institution

Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA

fYear

2010

Firstpage

21

Lastpage

22

Abstract

In this paper, device performance of high Al composition Al_0.72Ga_0.28N/AlN/GaN HEMTs with ALD Al₂O₃ dielectric is reported. Employing different gate metals, the threshold voltages were shifted by -0.8 V in 0.5-μm-long HEMTs, which indicates an unpinned Fermi level at the ALD Al₂O₃/ Al_0.72Ga_0.28N interface. With lower contact resistances, high Al AlGaN HEMTs are well suited for further lateral and vertical scaling to push towards high frequency E/D-mode performance.

Keywords

Fermi level; III-V semiconductors; alumina; aluminium compounds; contact resistance; gallium compounds; high electron mobility transistors; wide band gap semiconductors; work function; Al_0.72Ga_0.28N-AlN-GaN; Al₂O₃; HEMT; contact resistance; gate metals; high frequency E/D-mode; size -0.5 mum; threshold voltages; unpinned Fermi level; work-function engineering; Artificial intelligence; Gallium nitride; Gold; Logic gates;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2010

Conference_Location

South Bend, IN

ISSN

1548-3770

Print_ISBN

978-1-4244-6562-0

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2010.5551983

Filename

5551983