Title :
Temperature dependence of Ge/Si avalanche photodiodes
Author :
Dai, Daoxin ; Bowers, John E. ; Lu, Zhiwen ; Campbell, Joe C. ; Kang, Yimin
Author_Institution :
ECE Dept., Univ. of California Santa Barbara, Santa Barbara, CA, USA
Abstract :
In summary, we have presented the experimental results for characterizing the temperature dependence of Ge/Si SACM APDs. The dark current increases by a factor 2 every 10οC at Vbias= -15V. Due to the temperature dependence of the ionization rate, the gain G increases by around 1.3 times for a temperature reduction of ΔT=10οC. The measured GBP is over 400GHz and The GBP is not sensitive to the temperature change ranging from 10οC to 60°C.
Keywords :
avalanche photodiodes; germanium; ionisation; silicon; GBP; Ge-Si; SACM APD; avalanche photodiodes; dark current; ionization rate; temperature 10 C; temperature dependence; temperature reduction; Dark current; Photoconductivity; Silicon; Temperature; Temperature dependence; Temperature measurement; Temperature sensors;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551985
