Title :
A Model of Most Drain Current in Moderate Inversion
Author :
Altschul, V. ; Schacham-Diamand, Y.
Author_Institution :
Department of Electrical Engineering, Technion, Israel
Keywords :
Charge measurement; Computational complexity; Computational modeling; Current measurement; Doping; Equations; MOS devices; MOSFETs; Semiconductor process modeling; Threshold voltage;
Conference_Titel :
Electrical and Electronics Engineers in Israel, 1989. The Sixteenth Conference of
DOI :
10.1109/EEIS.1989.720014
