Title :
Polarization-engineered N-face III–V nitride quantum well LEDs
Author :
Verma, Jai ; Simon, John ; Protasenko, Vladimir ; Xing, Grace ; Jena, Debdeep
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
In conclusion, we report the successful realization of N-face polarization-doped QW UV LEDs. Electroluminescence from AlGaN regions indicates that AlχGai.χN QWs and AlyGaι.yN barriers can now be used to obtain respectable emission intensities for deeper UV or higher energy photons. A number of advantages of N-face optoelectronic devices p-type polarization doping, and better electron and hole injection facilitated by the correct orientation of the polarization field were pointed out.
Keywords :
III-V semiconductors; electroluminescence; light emitting diodes; semiconductor doping; semiconductor quantum wells; AlGaN; III-V nitride quantum well; N-face optoelectronic device; N-face polarization-doped quantum well; QW UV LED; electroluminescence; electron injection; energy photon; hole injection; p-type polarization doping; Aluminum gallium nitride; Face; Gallium nitride; Gold; Light emitting diodes; Optical polarization;
Conference_Titel :
Device Research Conference (DRC), 2010
Conference_Location :
South Bend, IN
Print_ISBN :
978-1-4244-6562-0
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2010.5551987
