Title :
A high efficiency 60GHz power amplifier in 90nm CMOS
Author :
Zeng, Dajie ; Wang, Hongrui ; Yang, Dongxu ; Zheng, Hongda ; Xue, Jinying ; Wang, Yan ; Zhang, Yaohui ; Yu, Zhiping
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
A high output power and high efficiency power amplifier (PA) is designed for 60 GHz wireless point-to-point communication using IBM 90 nm CMOS process. A high efficiency is achieved through the utilization of cascode structure with floating n-well and differential inductor to resonate out the parasitic capacitances. To further boost the output power, four PA units are combined together through power combining network. This PA achieves saturation power of 18.3 dBm and peak PAE of 24.3% at 60 GHz in simulation.
Keywords :
CMOS integrated circuits; field effect MMIC; millimetre wave power amplifiers; CMOS process; cascode structure; differential inductor; floating n-well; frequency 60 GHz; millimetre wave power amplifiers; parasitic capacitance; size 90 nm; wireless point-to-point communication; Capacitors; Inductors; Parasitic capacitance; Power amplifiers; Power generation; Resistance; Transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667377
