Title :
High-efficiency Class-F−1 power amplifier design with input harmonic manipulation
Author :
Dong, Lei ; He, Songbai ; You, Fei ; Lei, Qi
Author_Institution :
Dept. of Circuit & Syst., Univ. of Electron. Sci. & Tech. of China, Chengdu, China
Abstract :
This paper presents the design and realization of a high-efficiency Class-F-1 power amplifier, in which the input second harmonic effect is emphasized for the efficiency enhancement. Through the numerical analysis and device-model-based simulation, the optimum manipulation of input and output harmonic terminations are carried out. Following this knowledge, a 3.5-GHz Class-F-1 power amplifier with an accurate input harmonic control was fabricated using a commercial high power GaN HEMT. The experimental results show that a maximum power-added-efficiency (PAE) of 76.7% with 39.9dBm output power (Pout) and 12.9dB gain is achieved.
Keywords :
III-V semiconductors; gallium compounds; microwave power amplifiers; numerical analysis; power HEMT; wide band gap semiconductors; GaN; PAE; device-model-based simulation; efficiency 76.7 percent; efficiency enhancement; frequency 3.5 GHz; gain 12.9 dB; high power GaN HEMT; high-efficiency class-F-1 power amplifier design; input harmonic control; input harmonic manipulation; input harmonic termination; numerical analysis; output harmonic termination; power-added-efficiency; second harmonic effect; Gain measurement; Gallium nitride; Harmonic analysis; Impedance; Logic gates; Power amplifiers; Reflection; Class-F−1 power amplifier; GaN; High Efficiency; Input Harmonic Manipulation;
Conference_Titel :
Power Amplifiers for Wireless and Radio Applications (PAWR), 2012 IEEE Topical Conference on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4577-1119-0
DOI :
10.1109/PAWR.2012.6174925
