DocumentCode :
1630149
Title :
35 W bi-level supply modulated Doherty amplifier for 3G LTE base station
Author :
Kim, Joon Hyung ; Jung, Jae Ho ; Park, Chul Soon
Author_Institution :
Electron. & Telecommun. Res. Inst. (ETRI), Daejeon, South Korea
fYear :
2012
Firstpage :
13
Lastpage :
16
Abstract :
This paper presents a Doherty power amplifier (DPA) controlled by the optimized bi-level supply modulator to improve an overall efficiency. By utilizing the supply modulation method determined by the probability density function (PDF) of an interest signal, an estimated average efficiency can be improved as much as 8.5 % compared with that of conventional DPA. For the verification the proposed DPA using commercial 120 W GaN devices has been devised. The experimental results show that the proposed DPA delivers a drain efficiency (DE) of 53.8 % and power added efficiency (PAE) of 50 %, with a gain of 11.8 dB at an average output power of 34.7 W for a 2.65 GHz 10 MHz 3G LTE signal with a 9 dB peak-to-average power ratio (PAPR). The measure result reveals that the DE of proposed DPA is 6 % higher than that of conventional one.
Keywords :
3G mobile communication; Long Term Evolution; power amplifiers; 3G LTE base station; bi-level supply modulated Doherty amplifier; drain efficiency; frequency 2.65 GHz; gain 11.8 dB; interest signal; optimized bi-level supply modulator; power 34.7 W; power added efficiency; probability density function; supply modulation method; Base stations; Gallium nitride; Modulation; Multiaccess communication; Peak to average power ratio; Power amplifiers; Power generation; Doherty power amplifier; GaN; supply modulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Amplifiers for Wireless and Radio Applications (PAWR), 2012 IEEE Topical Conference on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4577-1119-0
Type :
conf
DOI :
10.1109/PAWR.2012.6174927
Filename :
6174927
Link To Document :
بازگشت