Title :
Analytical model of GaN MESFETs for high power and microwave frequency applications
Author :
Shanta, A.S. ; Hossain, D.B. ; Huq, T.R. ; Mahmood, R. ; Islam, M.S.
Author_Institution :
Dept. of Electr. & Electron. Eng., BRAC Univ., Dhaka, Bangladesh
Abstract :
A simple physics based model for Gallium Nitride (GaN) Metal Semiconductor Field Effect Transistor (MESFET) suitable for microwave frequency applications is presented. The developed analytical channel potential model can be used for short channel MESFETs with some modifications and assumptions. Analytical models for I-V characteristics, C-V characteristics, transconductance and optimum noise figure of GaN MESFET are presented. The effects of parasitic resistances and gate length modulation on these models have been studied. The models developed in this paper will be very helpful to understand the device behavior in nanometer regime for future applications.
Keywords :
III-V semiconductors; gallium compounds; microwave field effect transistors; power MESFET; wide band gap semiconductors; C-V characteristic; GaN; I-V characteristic; analytical channel potential model; gate length modulation; high power frequency application; metal semiconductor field effect transistor; microwave frequency application; nanometer device behavior; optimum noise figure; parasitic resistance effect; short channel MESFET; simple physics based model; transconductance noise figure; Analytical models; Capacitance; Gallium nitride; Logic gates; MESFETs; Noise figure; Transconductance; Analytical model; GaN; MESFET;
Conference_Titel :
Instrumentation & Measurement, Sensor Network and Automation (IMSNA), 2012 International Symposium on
Conference_Location :
Sanya
Print_ISBN :
978-1-4673-2465-6
DOI :
10.1109/MSNA.2012.6324509
