Design and thermal analysis of SiGe HBT with non-uniform finger length and non-uniform finger spacing

Author

Chen, Liang ; Zhang, Wan-Rong ; Jin, Dong-yue ; Xiao, Ying ; Wang, Ren-qing

Author_Institution

Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China

fYear

2010

Firstpage

1668

Lastpage

1670

Abstract

A novel multi-finger power SiGe heterojunction bipolar transistor (HBT) with non-uniform finger length and non-uniform finger spacing was proposed to improve the thermal stability. Thermal simulation for a ten-finger power SiGe HBT with novel structure was conducted with ANSYS software. Three-dimensional temperature distribution on emitter fingers was obtained. Compared with traditional structure power SiGe HBT, the maximum junction temperature of novel structure reduce significantly from 416.1K to 412K, the thermal resistance reduce from 154.8K/W to 149K/W, temperature distribution were significantly improved. Thermal stability was effective enhanced.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; thermal stability; ANSYS software; HBT; SiGe; emitter fingers; maximum junction temperature; multifinger power heterojunction bipolar transistor; nonuniform finger length; nonuniform finger spacing; thermal analysis; thermal stability; three-dimensional temperature distribution; Fingers; Heterojunction bipolar transistors; Junctions; Silicon germanium; Thermal resistance; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667384

Filename

5667384