Title :
A 0.13µm CMOS 2.3∼2.9GHz Direct-Conversion WiMAX/LTE transmitter with novel gain control
Author :
Zhang, Weifeng ; Huang, Jiwei ; Fang, Min ; Li, Zhengping ; Fang, Zhijian
Author_Institution :
Guangzhou Runxin Inf. Technol. Co. Ltd., Guangzhou, China
Abstract :
A 0.13μm CMOS Direct-Conversion WiMAX/LTE transmitter with novel binary modulation gain control scheme and wide frequency band coverage is presented. In this work, binary modulation gain control realizes 36dB gain control at baseband frequency instead of by RF VGA at RF frequency. Output power is +0.5dBm and calculated EVM is 1.8%. A 4th order Butterworth low pass filter supports 2MHz~12MHz, 7-step corner frequency control, and 30dB, -1dB/step gain control. The transmitter supports 2.3GHz~2.9GHz band. Total current consumption is 135mW with 1.2V/2.8V supply included RF DA, up-mixer, low pass filter, LO divider and buffer.
Keywords :
Butterworth filters; CMOS integrated circuits; Long Term Evolution; UHF mixers; WiMax; buffer circuits; frequency control; gain control; low-pass filters; low-power electronics; modulation; radio transmitters; 4th order Butterworth low pass filter; 7-step corner frequency control; CMOS direct-conversion WiMAX transmitter; EVM; LO divider; RF VGA; binary modulation gain control; buffer; direct-conversion LTE transmitter; frequency 2.3 GHz to 2.9 GHz; size 0.13 mum; up-mixer; wide frequency band coverage; Baseband; Computer architecture; Frequency modulation; Gain control; Radio frequency; Transmitters; Binary Modulation Gain Control; Direction-Conversion; RF Transmitter; WiMAX/LTE;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667388
