Title :
High efficiency wideband envelope tracking power amplifier with direct current sensing for LTE applications
Author :
Kwak, Myoungbo ; Jeong, Jinseong ; Hassan, Muhammad ; Yan, Jomei J. ; Kimball, Donald F. ; Asbeck, Peter M. ; Larson, Lawrence E.
Author_Institution :
Univ. of California at San Diego, La Jolla, CA, USA
Abstract :
A high efficiency wideband envelope tracking power amplifier for LTE applications is presented. The CMOS envelope amplifier with direct current sensing has a measured average efficiency of 78% with a 5 MHz LTE signal. The envelope tracking power amplifier including a GaAs HBT RF stage has overall power added efficiency (PAE) above 46% with an average LTE output power of 27.6 dBm and a gain of 26.5 dB.
Keywords :
CMOS integrated circuits; Long Term Evolution; gallium arsenide; heterojunction bipolar transistors; power amplifiers; CMOS envelope amplifier; GaAs HBT RF stage; LTE applications; direct current sensing; high efficiency wideband envelope tracking power amplifier; power added efficiency; CMOS integrated circuits; Power amplifiers; Power generation; Radio frequency; Switches; Wideband; Envelope tracking; LTE; RF power amplifiers; envelope amplifier; high efficiency;
Conference_Titel :
Power Amplifiers for Wireless and Radio Applications (PAWR), 2012 IEEE Topical Conference on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4577-1119-0
DOI :
10.1109/PAWR.2012.6174933
