Prediction of GaAs MESFET process-induced variations using a device-physics-based analytical model

Author

Shih, Ko-Ming ; Klemer, David P. ; Liou, Juin J.

Author_Institution

Dept. of Electr. Eng., Arlington Univ., TX, USA

fYear

1994

Firstpage

246

Lastpage

249

Abstract

This paper presents results of the use of a device-physics-based MESFET analysis code to predict the effects of process-induced variations on MESFET parameters. Such an approach is useful for predicting device yields and sensitivities of device parameters to variations in device fabrication processes such as gate recess depth and device dimensions. Our simulation is general in the sense that it can allow for arbitrary doping profiles and velocity-field characteristics.

Keywords

III-V semiconductors; Schottky gate field effect transistors; circuit optimisation; doping profiles; gallium arsenide; integrated circuit yield; microwave field effect transistors; semiconductor device models; semiconductor process modelling; GaAs; MESFET; arbitrary doping profiles; device dimensions; device fabrication processes; device parameter sensitivities; device yields; device-physics-based analytical model; gate recess depth; process-induced variations; velocity-field characteristics; Analytical models; Circuit simulation; Doping profiles; Electron mobility; FETs; Fabrication; Gallium arsenide; MESFETs; Mathematical model; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Southcon/94. Conference Record

Conference_Location

Orlando, FL, USA

Print_ISBN

0-7803-9988-9

Type

conf

DOI

10.1109/SOUTHC.1994.498109

Filename

498109