Title :
A dual mode GaAs HBT power amplifier for LTE applications
Author :
Huang, Jiwei ; Liao, Yinghao ; Chen, Zhijian
Author_Institution :
Inst. of RF-&OE IC, Southeast Univ., Nanjing, China
Abstract :
In this paper, a dual mode GaAs HBT power amplifier for LTE band I applications is present. The amplifier is designed to operate from 1.92 GHz to 1.98 GHz with 28 dB of gain, enough to work with transmitter chips with relative low output power. The amplifier deliveries 28 dBm of linear power at 3.4 V supply to satisfy the linearity requirement for the LTE application. To improve the average efficiency of the amplifier, a new structure of dual mode is proposed. At the high power mode, the efficiency of the amplifier is 34% at 28 dBm of CW output power, and at the low power mode, the efficiency of that is 22% at 15 dBm output power.
Keywords :
3G mobile communication; III-V semiconductors; UHF power amplifiers; gallium arsenide; heterojunction bipolar transistors; GaAs; LTE band I applications; dual mode HBT power amplifier; efficiency 22 percent; efficiency 34 percent; frequency 1.92 GHz to 1.98 GHz; gain 28 dB; long-term evolution; voltage 3.4 V; Driver circuits; Gallium arsenide; Heterojunction bipolar transistors; Peak to average power ratio; Power amplifiers; Power generation; 3GPP; Bias Circuit; Dual Mode; GaAs HBT; LTE; Linear Power Amplifiers;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667389
