DocumentCode
1630425
Title
NiCr fuse reliability-a new approach
Author
Vinson, J.E.
Author_Institution
Harris Semicond., Melbourne, FL, USA
fYear
1994
Firstpage
250
Lastpage
255
Abstract
Presents one technique to apply concurrent engineering in the development of a reliable fuse element in CMOS PROMs. The development required both a new circuit and process design. The five stages presented were used to produce a reliable fuse element that is also manufacturable. The use of these techniques uncovered several limitations in the circuit early enough in the development to be corrected. One reported in this paper was the poor current gain of the fusing bipolar transistor.
Keywords
CMOS memory circuits; PROM; cellular arrays; chromium alloys; concurrent engineering; electric fuses; integrated circuit design; integrated circuit reliability; nickel alloys; CMOS PROMs; NiCr; concurrent engineering; current gain; fuse reliability; fusing bipolar transistor; process design; Concurrent engineering; Fabrication; Fuses; Integrated circuit reliability; Joining processes; Manufacturing processes; Nonvolatile memory; PROM; Resistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Southcon/94. Conference Record
Conference_Location
Orlando, FL, USA
Print_ISBN
0-7803-9988-9
Type
conf
DOI
10.1109/SOUTHC.1994.498110
Filename
498110
Link To Document