DocumentCode :
1630463
Title :
A method to extract parameters in a generalized two-terminal device
Author :
Ortiz-Conde, Adelmo ; Sánchez, F. J García ; Liou, J.J. ; Andrian, J. ; Laurence, R.J. ; Schmidt, P.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
fYear :
1994
Firstpage :
262
Lastpage :
265
Abstract :
A simple technique, based on integrating the current-voltage characteristics, is proposed to determine series resistance and other device parameters of a two-terminal device. The case of the diode is used to illustrate the usefulness of the technique.
Keywords :
characteristics measurement; electric resistance measurement; semiconductor device models; semiconductor diodes; current-voltage characteristic; device parameter extraction; generalized two-terminal device; semiconductor diodes; series resistance; Current-voltage characteristics; Electric resistance; Equations; MOSFETs; Parameter extraction; Semiconductor devices; Semiconductor diodes; Thermal factors; Thermal resistance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Southcon/94. Conference Record
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-9988-9
Type :
conf
DOI :
10.1109/SOUTHC.1994.498112
Filename :
498112
Link To Document :
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