DocumentCode
1630469
Title
SPICE modeling of the emitter switched thyristor
Author
Wong, Waisum ; Shekar, M.S.
Author_Institution
Siliconix Inc., Santa Clara, CA, USA
fYear
1994
Firstpage
266
Lastpage
269
Abstract
A SPICE model for the MOS-gated Emitter Switched Thyristor (EST) structure is developed for the first time. This static model is based on analytical models developed through two-dimensional numerical simulations using PISCES. Using this model the complete static characteristics of the EST, including the IGBT region of operation can be described. The EST model implemented in SPICE shows good agreement between the model and measurements (600 V EST) for the forward voltage drop and the main thyristor latching current density as a function of the gate bias.
Keywords
MOS-controlled thyristors; SPICE; digital simulation; equivalent circuits; semiconductor device models; 600 V; IGBT region; MOS-gated emitter switched thyristor; SPICE modeling; analytical models; forward voltage drop; gate bias; static model; thyristor latching current density; two-dimensional numerical simulations; Anodes; Cathodes; Electrons; Equivalent circuits; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; SPICE; Thyristors; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Southcon/94. Conference Record
Conference_Location
Orlando, FL, USA
Print_ISBN
0-7803-9988-9
Type
conf
DOI
10.1109/SOUTHC.1994.498113
Filename
498113
Link To Document