Title :
A low-voltage, high-gain CMOS operational amplifier for switched-capacitor application in a digital 90nm CMOS process
Author :
Khansarizadeh, Atieh S. ; Mirhosseini, S. Hassan ; Mehregan, Saeed
Author_Institution :
Dept. of Electr. Eng., Qazvin Islamic Azad Univ. (QIAU), Qazvin, Iran
Abstract :
This paper discusses the design of low-voltage, high gain, fully differential CMOS Op-amp in a low voltage (VDD = 1.0V) 90nm CMOS process. This Op-amp is ideally suited for switch-capacitor circuits and simulations show a unity gain bandwidth of 651MHz with 1pF load capacitor and a DC gain of more than 107dB. The phase margin is around 58°. The circuit topology is a two-stage folded cascode structure with regulated cascodes for gain boosting.
Keywords :
CMOS digital integrated circuits; operational amplifiers; switched capacitor networks; bandwidth 651 MHz; capacitance 1 pF; circuit topology; digital CMOS process; fully differential CMOS operational-amplifier; high-gain CMOS operational amplifier; load capacitor; low-voltage operational amplifier; phase margin; size 90 nm; switch-capacitor circuits; two-stage folded cascode structure; unity gain bandwidth; voltage 1.0 V; Bandwidth; Boosting; CMOS integrated circuits; CMOS process; Switching circuits; Transistors; Voltage control; Boosting; CMFB; Folded Cascode; Switched-Capacitor;
Conference_Titel :
Instrumentation & Measurement, Sensor Network and Automation (IMSNA), 2012 International Symposium on
Conference_Location :
Sanya
Print_ISBN :
978-1-4673-2465-6
DOI :
10.1109/MSNA.2012.6324519
