A low power low noise CMOS amplifier for Bluetooth applications

Author

Nadia, Afifi ; Belgacem, Hamdi ; Aymen, Fradi

Author_Institution

Electron. & Microelectron.´ Lab., Monastir, Tunisia

fYear

2013

Firstpage

1

Lastpage

4

Abstract

In this paper a proposed CMOS LNA which fabricated with the 0.13um CMOS technology. The amplifier is optimized for Bluetooth applications operating in the 2.4-2.5 GHz band. The inductive degeneration topology used in the LNA provides low noise, high gain and a large IIP3. The LNA consists of two amplifying stages with on-chip inductors and capacitors. Simulation was made by using the Advanced Design System (ADS) software. The proposed LNA consuming 6.11mA current at 1.2V supply voltage, it exhibits a linear gain of 20.343 dB, noise figure of 1.98 dB, input return loss (S11) of -11.11 dB, S12 of -44.69 dB and an IIP3 of 5 dBm.

Keywords

Bluetooth; CMOS analogue integrated circuits; low noise amplifiers; low-power electronics; Advanced Design System software; Bluetooth applications; CMOS LNA; IIP3; capacitors; current 6.11 mA; frequency 2.4 GHz to 2.5 GHz; inductive degeneration topology; low noise CMOS amplifier; low power CMOS amplifier; on-chip inductors; size 0.13 mum; voltage 1.2 V; CMOS integrated circuits; Circuit stability; Gain; Impedance matching; Noise; Noise figure; Radio frequency; Bluetooth paplications; IIP3; LNA; Low power; Noise Figure; S parameters; stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Electronics (AE), 2013 International Conference on

Conference_Location

Pilsen

ISSN

1803-7232

Print_ISBN

978-80-261-0166-6

Type

conf

Filename

6636510