• DocumentCode
    1630567
  • Title

    Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC Source/Drain

  • Author

    Amat, E. ; Rodríguez, R. ; González, M.B. ; Martín-Martínez, J. ; Nafría, M. ; Aymerich, X. ; Machkaoutsan, V. ; Bauer, M. ; Verheyen, P. ; Simoen, E.

  • Author_Institution
    Electron. Eng. Dept., Univ. Autonoma de Barcelona, Barcelona, Spain
  • fYear
    2010
  • Firstpage
    1648
  • Lastpage
    1650
  • Abstract
    Channel Hot Carrier (CHC) degradation on uniaxially strained pMOS and nMOS samples with different S/D materials has been analyzed. The results show that the CHC damage is larger in the strained samples in comparison with the unstrained devices, and increases with the temperature.
  • Keywords
    MOSFET; hot carriers; silicon compounds; SiC; SiGe; channel hot-carrier degradation; embedded source-drain; strained MOSFET; uniaxially strained nMOS samples; uniaxially strained pMOS samples; Degradation; Impact ionization; MOSFETs; Silicon carbide; Silicon germanium; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667396
  • Filename
    5667396
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1630567