Title :
Thin Film Deposition using Atmospheric Pressure Microplasmas
Author :
Staack, D. ; Farouk, B. ; Gutsol, A. ; Fridman, A.
Author_Institution :
Drexel Univ., Philadelphia
Abstract :
Summary form only given. It is desirable to use atmospheric pressure plasmas for thin film material processing because of the lower facility costs compared to vacuum processing and the possibility to operate continuous rather than batch processes. However, several major concerns exist in attempting to use atmospheric pressure plasmas for the plasma enhanced chemical vapor deposition (PECVD) of thin films. These include: 1) the creation of stable non-thermal plasma discharges, 2) discharge uniformity and size, and 3) particle formation. In this research we address these issues with reference to the use of DC and RF microplasmas for the atmospheric pressure PECVD (APPECVD) of hydrogenated amorphous carbon film a-C:H from H2, CH4 precursors.
Keywords :
amorphous semiconductors; carbon; discharges (electric); elemental semiconductors; hydrogen; plasma CVD; plasma CVD coatings; semiconductor doping; semiconductor thin films; sputter deposition; C:H; DC microplasmas; RF microplasmas; a-C:H; atmospheric pressure PECVD; atmospheric pressure microplasmas; continuous operation; discharge size; discharge uniformity; hydrogenated amorphous carbon film; particle formation; plasma enhanced chemical vapor deposition; stable nonthermal plasma discharges; thin film deposition; thin film material processing; Amorphous materials; Atmospheric-pressure plasmas; Chemical vapor deposition; Costs; Plasma chemistry; Plasma materials processing; Plasma stability; Radio frequency; Sputtering; Transistors;
Conference_Titel :
Plasma Science, 2007. ICOPS 2007. IEEE 34th International Conference on
Conference_Location :
Albuquerque, NM
Print_ISBN :
978-1-4244-0915-0
DOI :
10.1109/PPPS.2007.4346139
