DocumentCode :
1630686
Title :
Crosstalk in coupled microstrip lines due to substrate permittivity and S/h ratios
Author :
Ungvichian, Vichate ; Kopp, Markus B.
Author_Institution :
Florida Atlantic Univ., Boca Raton, FL, USA
fYear :
1994
Firstpage :
301
Lastpage :
304
Abstract :
The Finite Element Method (FEM) is used to determine the magnitude of crosstalk due to substrate permittivities and S/h ratios in a pair of parallel coplanar microstrip lines. One trace is driven by an ideal current source (generator strip) and the other line is a passive (receptor) strip. At the operating frequency of 200 MHz, the dielectric of the substrates is assumed to be lossless and homogeneous. Computed results when compared with the results obtained from analytical formulation show a good agreement. Further, the study indicates that an increase in the substrate permittivity would increase the crosstalk.
Keywords :
crosstalk; finite element analysis; microstrip lines; permittivity; substrates; transmission line theory; 200 MHz; FEM; coupled microstrip lines; crosstalk; finite element method; parallel coplanar microstrip lines; substrate permittivity; Conducting materials; Conductors; Crosstalk; Dielectric losses; Dielectric substrates; Finite element methods; Microstrip; Permittivity; Resistors; Strips;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Southcon/94. Conference Record
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-9988-9
Type :
conf
DOI :
10.1109/SOUTHC.1994.498120
Filename :
498120
Link To Document :
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