DocumentCode
1630686
Title
Crosstalk in coupled microstrip lines due to substrate permittivity and S/h ratios
Author
Ungvichian, Vichate ; Kopp, Markus B.
Author_Institution
Florida Atlantic Univ., Boca Raton, FL, USA
fYear
1994
Firstpage
301
Lastpage
304
Abstract
The Finite Element Method (FEM) is used to determine the magnitude of crosstalk due to substrate permittivities and S/h ratios in a pair of parallel coplanar microstrip lines. One trace is driven by an ideal current source (generator strip) and the other line is a passive (receptor) strip. At the operating frequency of 200 MHz, the dielectric of the substrates is assumed to be lossless and homogeneous. Computed results when compared with the results obtained from analytical formulation show a good agreement. Further, the study indicates that an increase in the substrate permittivity would increase the crosstalk.
Keywords
crosstalk; finite element analysis; microstrip lines; permittivity; substrates; transmission line theory; 200 MHz; FEM; coupled microstrip lines; crosstalk; finite element method; parallel coplanar microstrip lines; substrate permittivity; Conducting materials; Conductors; Crosstalk; Dielectric losses; Dielectric substrates; Finite element methods; Microstrip; Permittivity; Resistors; Strips;
fLanguage
English
Publisher
ieee
Conference_Titel
Southcon/94. Conference Record
Conference_Location
Orlando, FL, USA
Print_ISBN
0-7803-9988-9
Type
conf
DOI
10.1109/SOUTHC.1994.498120
Filename
498120
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