Title :
Modeling anomalous collector current behavior in gated lateral bipolar transistors
Author :
Joardar, Kuntal ; Ford, Jenny
Author_Institution :
Motorola, Mesa, AZ, USA
Abstract :
An improved analytical model for lateral bipolar transistors is described that allows reproduction of anomalous effects often observed in lateral bipolar junction transistors (BJTs) arising from the presence of the gate electrode and a nonuniform doping profile in the base. The model also includes hybrid mode operation of the lateral BJT. Results obtained from this model are compared with 2-D numerical device simulations and measurements
Keywords :
bipolar transistors; 2-D numerical device simulations; Gummel plot; PISCES; anomalous collector current behavior; gated lateral bipolar transistors; hybrid mode operation; model; nonuniform doping profile; pnp transistor; Bipolar transistors;
Conference_Titel :
Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1993.617496
