Title :
Non-quasistatic modeling of the BJT quasi-neutral base
Author :
Szeto, Clement K. ; Ko, Ping K. ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
A non-quasistatic charge-based modeling of the bipolar junction transistor (BJT) model developed for all injection levels in the quasi-neutral base region is implemented for circuit simulation. 2-D and 1-D device simulations with constant and exponential doping devices verify the transient analysis
Keywords :
bipolar transistors; 1-D device simulations; 2D device simulations; BJT; charge-based modeling; circuit simulation; nonquasistatic modelling; quasineutral base region; transient analysis; Bipolar transistors;
Conference_Titel :
Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1993.617497
