• DocumentCode
    1630757
  • Title

    A high isolation and low insertion loss T/R Switch design

  • Author

    Yang, Xiao-Feng ; Li, Kang ; Hao, Yue ; Xie, Yuan-Bin

  • Author_Institution
    Key Lab. of Wide Band-gap Semicond. Mater. & Devices of Minist. of Educ., Xidian Univ., Xi´´an, China
  • fYear
    2010
  • Firstpage
    749
  • Lastpage
    751
  • Abstract
    A high isolation and low insertion loss transmit/receive switch is presented. The T/R Switch is based on the TSMC 0.18 μm 1P6M RFCMOS process. Shunt inductor resonance and body-floating techniques are used to improve the isolation and power handling capability. The simulation exhibit the insertion loss is 612mdB, the isolation between transmitter and receiver is 44.3 dB, input 1-dB compression point (P1dB) of 26.38 dBm. The chip area is 0.825×0.813 mm2.
  • Keywords
    CMOS integrated circuits; isolation technology; switches; 1P6M RFCMOS process; TSMC; body-floating techniques; insertion loss transmit-receive switch; power handling capability; shunt inductor resonance; size 0.18 mum; Capacitance; Impedance; Insertion loss; Integrated circuit modeling; Switches; Switching circuits; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667403
  • Filename
    5667403
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1630757