Title :
A high isolation and low insertion loss T/R Switch design
Author :
Yang, Xiao-Feng ; Li, Kang ; Hao, Yue ; Xie, Yuan-Bin
Author_Institution :
Key Lab. of Wide Band-gap Semicond. Mater. & Devices of Minist. of Educ., Xidian Univ., Xi´´an, China
Abstract :
A high isolation and low insertion loss transmit/receive switch is presented. The T/R Switch is based on the TSMC 0.18 μm 1P6M RFCMOS process. Shunt inductor resonance and body-floating techniques are used to improve the isolation and power handling capability. The simulation exhibit the insertion loss is 612mdB, the isolation between transmitter and receiver is 44.3 dB, input 1-dB compression point (P1dB) of 26.38 dBm. The chip area is 0.825×0.813 mm2.
Keywords :
CMOS integrated circuits; isolation technology; switches; 1P6M RFCMOS process; TSMC; body-floating techniques; insertion loss transmit-receive switch; power handling capability; shunt inductor resonance; size 0.18 mum; Capacitance; Impedance; Insertion loss; Integrated circuit modeling; Switches; Switching circuits; Transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667403
