Title :
BJT forward bias degradation effects and mechanisms: A gain and noise study
Author :
Sun, C. Jack ; Grotjohn, T.A. ; Huang, C.-J. ; Reinhard, D.K. ; Yu, C.-C.W.
Author_Institution :
Electr. Eng. Dept., Michigan State Univ., E. Lansing, MI, USA
Abstract :
Bipolar junction transistor (BJT) noise and gain changes under forward bias stress are presented for three fabrication technologies. The combination of a high current and a high temperature produced electromigration which caused an initial 1/f noise decrease. The noise behavior offers a method for distinguishing between hot-electron and electromigration induced degradation
Keywords :
bipolar transistors; 1/f noise decrease; BJT; electromigration; forward bias degradation effects; forward bias stress; gain changes; high current; high temperature; noise behavior; Bipolar transistors;
Conference_Titel :
Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1993.617501
