Title :
Logarithm cofactor difference extrema of MOS devices´ post-breakdown current and application to parameter extraction
Author :
Ma, Chenyue ; Zhang, Chenfei ; Zhang, Xiufang ; He, Frank ; Zhang, Xing
Author_Institution :
Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China
Abstract :
This paper proposed an advanced logarithm cofactor difference operator (LogCDO) method to extract parameters of the MOS devices´ post-breakdown current. The experimental results of the post breakdown current in MOS devices at different temperature are used to demonstrate the validity of the advanced LogCDO method. The post-breakdown current is equivalent to a dual diode circuit model, and then the LogCDO method is applied to extract key model parameters. The extraction results are consistent very well with the measured data over a wide range of temperature.
Keywords :
MIS devices; parameter estimation; semiconductor device breakdown; semiconductor device models; semiconductor diodes; LogCDO method; MOS device; dual diode circuit model; logarithm cofactor difference extrema; parameter extraction; post-breakdown current; Data mining; Data models; Electric breakdown; Integrated circuit modeling; MOS devices; Temperature distribution; Temperature measurement;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667405
