• DocumentCode
    1630886
  • Title

    The effects of hydrogen on current gain and emitter resistance of poly emitter bipolar transistors

  • Author

    Zhao, J. ; Li, G.P. ; Liao, K.Y. ; Chin, M.R. ; Vu, T. ; Sun, J.Y.-C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA
  • fYear
    1993
  • Firstpage
    223
  • Lastpage
    226
  • Abstract
    The effects of hydrogen passivation at the polysilicon grain boundaries and poly/mono-silicon interface on inducing a β increase and Re decrease are investigated in poly emitter transistors. Increase of β and decrease of Re are attributed to the reduction of effective recombination velocity of minority carriers and the decrease of potential barrier for majority carrier transport in the poly emitters by the passivation of silicon dangling bonds, respectively. The implications of the hydrogen passivation on β and Re for devices with a RTA emitter are also discussed
  • Keywords
    bipolar transistors; H plasma treatment; RTA emitter; Si; current gain; dangling bonds; effective recombination velocity; elemental semiconductor; emitter resistance; majority carrier transport; minority carriers; passivation; poly/mono interface; polysilicon emitter bipolar transistors; polysilicon grain boundaries; potential barrier; Bipolar transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-1316-X
  • Type

    conf

  • DOI
    10.1109/BIPOL.1993.617503
  • Filename
    617503
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1630886