Title :
Low specific contact resistivity nickel to silicon carbide determined using a two contact circular test structure
Author :
Yue Pan ; Collins, Aaron M. ; Leech, Patrick W. ; Reeves, Geoffrey K. ; Holland, Anthony S. ; Tanner, Philip
Author_Institution :
Sch. of Electr. & Comput. Eng., RMIT Univ., Melbourne, VIC, Australia
Abstract :
We present the experimentally determined specific contact resistivity of as deposited nickel to highly doped n-type 3-C silicon carbide using a novel test structure. The specific contact resistivity, extracted using this test structure and the corresponding methodology, is (0.8-5.7)×10-6 Ω·cm2.
Keywords :
electrical contacts; nickel; semiconductor doping; silicon compounds; wide band gap semiconductors; SiC:Ni; contact circular test structure; deposited nickel; doped n-type 3-C silicon carbide; low specific contact resistivity; Conductivity; Electrodes; Mathematical model; Nickel; Resistance; Silicon carbide; Transmission line measurements; circular transmission line model; contact resistance; silicon carbide; specific contact resistivity;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2014 International Conference on
Conference_Location :
Udine
Print_ISBN :
978-1-4799-2193-5
DOI :
10.1109/ICMTS.2014.6841471
