Title :
A CMOS 0.5–10.6 GHz inductor feedback low noise amplifier for multi-standard application
Author :
Zhang, Kaichen ; Li, Wei ; Zhou, Feng ; Li, Ning ; Ren, Junyan
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
In this paper, an ultra-wideband low-noise-amplifier (LNA) is designed for low-voltage and multi-standard applications in 0.13 μm CMOS technology. Based on conversional resistive-negative-feedback structure, a novel feedback inductor technology is proposed. The presented LNA achieves a voltage gain of 14.7 dB, 2.95-4.1 dB noise figure from 0.5-10.6 GHz including test buffer. And the IIP3 is -7.2dBm at 8GHz, while consumes 14.4mW from a 1.2V voltage supply.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; UHF amplifiers; buffer circuits; feedback amplifiers; field effect MMIC; inductors; integrated circuit noise; low noise amplifiers; ultra wideband technology; CMOS technology; LNA; frequency 0.5 GHz to 10.6 GHz; inductor feedback low noise amplifier; low-voltage application; multistandard application; noise figure 2.95 dB to 4.1 dB; power 14.4 mW; resistive-negative-feedback structure; size 0.13 mum; test buffer; ultra-wideband low noise amplifier; voltage 1.2 V; Gain; Impedance matching; Inductors; Logic gates; Parasitic capacitance; Wideband;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667410
