Comparison of channel length extracted from gate capacitance with that extracted from channel resistance

The two effective channel lengths L_CAP1 and L_CAP2 which are extracted from the gate capacitances with and without the fringe component, are compared with the effective channel length extracted from channel resistance L_CEF. It is found that L_CAP1 is about 30 nm longer than L_CAP2 and almost coincides with L_CEF for the samples made with 65-nm technology. It is considered that this difference is caused by the extension regions next to source and drain regions.