DocumentCode :
1631018
Title :
A dynamic thermo-feedback model for bipolar transistor
Author :
Liang, Ji-Fuh ; Lin, H.C. ; Petrosky, K.J.
Author_Institution :
Electr. Eng. Dept., Maryland Univ., College Park, MD, USA
fYear :
1993
Firstpage :
245
Lastpage :
248
Abstract :
A compact bipolar transistor model is proposed to analyze the thermal effect on the device operations. The rise of working temperature is modeled as a feedback voltage to modify the operation of the transistor. Basic structure of the model is composed of two transistors, one for base-collector junction characterization, the other for base-emitter characterization. The principle is described and the model is successfully implemented on SPICE3. DC, AC and transient analyses are all included. Excellent agreement between the model and the experimental data of dynamic output characteristics of a microwave power transistor justifies the model
Keywords :
microwave bipolar transistors; AC analysis; DC analysis; SPICE3; bipolar transistor; dynamic output characteristics; dynamic thermo-feedback model; equivalent circuit; feedback voltage; microwave power transistor; rise of working temperature; transient analyses; Semiconductor device thermal factors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
Type :
conf
DOI :
10.1109/BIPOL.1993.617508
Filename :
617508
Link To Document :
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