DocumentCode
1631045
Title
Physics-based multiple-pole models for BJT self-heating
Author
Brodsky, Jonathan S. ; Zweidinger, David T. ; Fox, Robert M.
Author_Institution
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fYear
1993
Firstpage
249
Lastpage
252
Abstract
A new model allows prediction of bipolar junction transistor (BJT) transient, DC or small-signal self-heating based on device geometry. The models are implemented in SPICE using multiple-pole RC models for thermal impedance. Polynomials are used to predict the RC circuit values. Circuit simulations demonstrate the conditions that make some circuits sensitive to self-heating
Keywords
semiconductor device models; BJT self-heating; DC self-heating; RC circuit values; RC models; SPICE; device geometry; multiple-pole models; physics-based models; polynomial representations; small-signal self-heating; thermal feedback; thermal impedance; transient self-heating; Semiconductor device thermal factors;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-1316-X
Type
conf
DOI
10.1109/BIPOL.1993.617509
Filename
617509
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