• DocumentCode
    1631053
  • Title

    An improved Phase/Frequency Detector and a glitch-suppression charge pump design for PLL applications

  • Author

    Cai, Deyun ; Fu, Haipeng ; Chen, Danfeng ; Ren, Junyan ; Li, Wei ; Li, Ning

  • Author_Institution
    State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
  • fYear
    2010
  • Firstpage
    773
  • Lastpage
    775
  • Abstract
    This paper presents an improved phase frequency detector (PFD) and a novel charge pump (CP) for phase locked loop (PLL) applications. The output signals of the proposed PFD have perfect symmetry with the additional four latches. Two small PMOS transistors and two inverters are added to work as level recovery to avoid the uncertain state of PFD when the circuit powers on. The proposed CP circuit employs two rail-to-rail OP amplifiers to minimize the mismatch between the charging and the discharging current, which minimizes the steady-state phase error in a PLL and reduces the reference spurs. Moreover, a simple but effective technique is proposed to suppress the glitches of the output current, which also decreases the level of reference spurs in a PLL and at the same time increases the dynamic range of the CP. A PLL adopting the proposed PFD and CP is fabricated in TSMC 0.13um 1.2V CMOS process, and test results indicate that the PLL can achieve -56dBc reference spur level.
  • Keywords
    CMOS integrated circuits; MOSFET; charge pump circuits; invertors; operational amplifiers; phase detectors; phase locked loops; PLL applications; PMOS transistors; TSMC CMOS process; charge pump circuit; charging current; discharging current; glitch-suppression charge pump design; improved phase-frequency detector; inverters; level recovery; phase locked loop applications; rail-to-rail OP amplifiers; reference spurs; size 0.13 mum; voltage 1.2 V; Charge pumps; Dynamic range; Noise measurement; Phase frequency detector; Phase locked loops; Phase noise; Semiconductor device measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667415
  • Filename
    5667415