DocumentCode
1631053
Title
An improved Phase/Frequency Detector and a glitch-suppression charge pump design for PLL applications
Author
Cai, Deyun ; Fu, Haipeng ; Chen, Danfeng ; Ren, Junyan ; Li, Wei ; Li, Ning
Author_Institution
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
fYear
2010
Firstpage
773
Lastpage
775
Abstract
This paper presents an improved phase frequency detector (PFD) and a novel charge pump (CP) for phase locked loop (PLL) applications. The output signals of the proposed PFD have perfect symmetry with the additional four latches. Two small PMOS transistors and two inverters are added to work as level recovery to avoid the uncertain state of PFD when the circuit powers on. The proposed CP circuit employs two rail-to-rail OP amplifiers to minimize the mismatch between the charging and the discharging current, which minimizes the steady-state phase error in a PLL and reduces the reference spurs. Moreover, a simple but effective technique is proposed to suppress the glitches of the output current, which also decreases the level of reference spurs in a PLL and at the same time increases the dynamic range of the CP. A PLL adopting the proposed PFD and CP is fabricated in TSMC 0.13um 1.2V CMOS process, and test results indicate that the PLL can achieve -56dBc reference spur level.
Keywords
CMOS integrated circuits; MOSFET; charge pump circuits; invertors; operational amplifiers; phase detectors; phase locked loops; PLL applications; PMOS transistors; TSMC CMOS process; charge pump circuit; charging current; discharging current; glitch-suppression charge pump design; improved phase-frequency detector; inverters; level recovery; phase locked loop applications; rail-to-rail OP amplifiers; reference spurs; size 0.13 mum; voltage 1.2 V; Charge pumps; Dynamic range; Noise measurement; Phase frequency detector; Phase locked loops; Phase noise; Semiconductor device measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5797-7
Type
conf
DOI
10.1109/ICSICT.2010.5667415
Filename
5667415
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